Paper Title:
Grayscale Junction Termination for High-Voltage SiC Devices
  Abstract

In silicon carbide devices used above around 2.4 kV, effective anode edge termination usually requires a high-resolution floating guard ring implant or multiple lithography/implant cycles to effect a multi-zone junction termination extension. In general the goal is to produce a smoothly tapered field profile to prevent high-voltage field-crowding that causes premature breakdown at the edge of the high voltage electrode. Using a much simpler grayscale photolithographic technique and a single termination implant, we directly produce the desired tapered doping profile. The effectiveness of this termination is shown by the near-ideal (6.1 kV) breakdown measured in PiN diodes made with a 38 µm intrinsic layer. The simple method is applicable to the fabrication of many high-voltage devices.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
691-694
DOI
10.4028/www.scientific.net/MSF.615-617.691
Citation
E. A. Imhoff, F. J. Kub, K. D. Hobart, "Grayscale Junction Termination for High-Voltage SiC Devices", Materials Science Forum, Vols. 615-617, pp. 691-694, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Haruka Shimizu, Yasuo Onose, Tomoyuki Someya, Hidekatsu Onose, Natsuki Yokoyama
Abstract:We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an...
1059