Paper Title:
Lifetime Investigations of 4H-SiC PiN Power Diodes
  Abstract

Lifetime measurements are performed on 4H-SiC pin power diodes (6.5 kV). The lifetime values in the base range from 1.1 s to 2.1 s; these values demonstrate the high quality of the 4H-SiC epilayer and the optimized device processing. The observed lifetimes are correlated with deep defect centers detected by deep level transient spectroscopy. The role of the Z1/2-center as a lifetime killer is discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
699-702
DOI
10.4028/www.scientific.net/MSF.615-617.699
Citation
S. A. Reshanov, W. Bartsch, B. Zippelius, G. Pensl, "Lifetime Investigations of 4H-SiC PiN Power Diodes", Materials Science Forum, Vols. 615-617, pp. 699-702, 2009
Online since
March 2009
Keywords
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