Paper Title:
Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
  Abstract

Two SiC single crystal ingots were prepared using sublimation PVT techniques through the different process procedure and then their crystal quality was systematically compared, because the present research was focused to improve the quality of SiC crystal by modifying the initial stage of the PVT growth. Before the main growth step for growing SiC bulk crystal, initial stage period where growth rate was kept to relatively low rate of <10μm/h was introduced to conventional process procedure. N-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC was successfully fabricated. As compared to the characteristics of SiC crystal grown using the conventional schedule, the quality of SiC crystal grown with modifying the initial stage was significantly improved, exhibiting decrease of defect formation such as micropipe and polytype formation.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
7-10
DOI
10.4028/www.scientific.net/MSF.615-617.7
Citation
J. W. Choi, C. H. Son, J. M. Choi, G. S. Lee, W. J. Lee, I. S. Kim, B. C. Shin, K. R. Ku, "Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method", Materials Science Forum, Vols. 615-617, pp. 7-10, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez
51
Authors: Kazuhiko Kusunoki, S. Munetoh, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima
123
Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
Abstract:SiC crystal boules with different shapes were prepared using sublimation physical vapor transport technique (PVT) and then their crystal...
47
Authors: Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda
Abstract:We investigated dislocation behavior in the crystal grown on 6H-SiC (0001) by solution method using synchrotron X-ray topography and thermal...
28
Authors: Tatsuo Fujimoto, Noboru Ohtani, Shinya Sato, Masakazu Katsuno, Hiroshi Tsuge, Wataru Ohashi
Chapter 1: SiC Bulk Growth
Abstract:Sublimation-recrystallization processes occurring during PVT are investigated from the viewpoint of quasi-equilibrium phase transitions of...
21