Paper Title:
Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
  Abstract

This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
703-706
DOI
10.4028/www.scientific.net/MSF.615-617.703
Citation
N. Dheilly, D. Planson, P. Brosselard, J. ul Hassan, P. Bevilacqua, D. Tournier, J. Montserrat, C. Raynaud, H. Morel, "Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique", Materials Science Forum, Vols. 615-617, pp. 703-706, 2009
Online since
March 2009
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Price
$32.00
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