Paper Title:
Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
| Periodical | Materials Science Forum (Volumes 615 - 617) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 703-706 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.703 |
| Citation | Nicolas Dheilly et al., 2009, Materials Science Forum, 615-617, 703 |
| Online since | March, 2009 |
| Authors | Nicolas Dheilly, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Pascal Bevilacqua, Dominique Tournier, Josep Montserrat, Christophe Raynaud, Hervé Morel |
| Keywords | Bipolar Diode, Carrier Lifetime Temperature-Dependence, OCVD, Open Circuit Voltage Decay |
| Price | US$ 28,- |
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Abstract
This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.
