Paper Title:
Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
  Abstract

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
715-718
DOI
10.4028/www.scientific.net/MSF.615-617.715
Citation
A. Ritenour, V. Bondarenko, R. L. Kelley, D. C. Sheridan, "Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications", Materials Science Forum, Vols. 615-617, pp. 715-718, 2009
Online since
March 2009
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$32.00
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