Paper Title:
High Temperature Characteristics of 4H-SiC RESURF-Type JFET
  Abstract

400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were fabricated. Measurements on the on-resistance, blocking and switching characteristics at high temperature were carried out. It was confirmed that the JFET has smaller dependence of on-resistance on temperature than a Si-MOSFET and positive temperature dependence of the breakdown voltage. It was also confirmed that the JFET has fast switching characteristics, that is, the turn-on and turn-off times are about 15 ns and 10 ns, at 200 °C as well as at 25 °C. A demonstration of a DC-DC converter using a module consisting of the JFET was carried out at a junction temperature of 200 °C. Stable continuous switching operation of the JFET at a junction temperature of 200 °C was confirmed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
727-730
DOI
10.4028/www.scientific.net/MSF.615-617.727
Citation
K. Fujikawa, K. Sawada, H. Tokuda, H. Tamaso, S. Harada, J. Shinkai, T. Tsuno, Y. Namikawa, "High Temperature Characteristics of 4H-SiC RESURF-Type JFET", Materials Science Forum, Vols. 615-617, pp. 727-730, 2009
Online since
March 2009
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Price
$32.00
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