Paper Title:
Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
  Abstract

Using joined super-lattice Kinetic Monte Carlo simulations, continuous modelling and recent experimental data on the homoepitaxial growth of 4H Silicon Carbide we study the transition between monocrystalline and polycrystalline growth in terms of misorientation cut, growth rate and temperature. We compare these optimally calibrated results both with previous continuous models and literature data. We demonstrate that this study was, indeed, necessary to correctly reformulate the phase diagram of the transition.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
73-76
DOI
10.4028/www.scientific.net/MSF.615-617.73
Citation
M. Camarda, A. La Magna, F. La Via, "Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC", Materials Science Forum, Vols. 615-617, pp. 73-76, 2009
Online since
March 2009
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Price
$32.00
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