Paper Title:
Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
  Abstract

After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
731-734
DOI
10.4028/www.scientific.net/MSF.615-617.731
Citation
R. Elpelt, P. Friedrichs, J. Hippeli, R. Schörner, M. Treu, P. Türkes, "Electro-Thermal SPICE Model for High-Voltage SiC VJFETs", Materials Science Forum, Vols. 615-617, pp. 731-734, 2009
Online since
March 2009
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Price
$32.00
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