Paper Title:
Silicon Carbide Static Induction Transistor with Implanted Buried Gate
  Abstract

Buried gate static induction transistors (BGSITs) were fabricated on commercial 4H-SiC wafer with 20 m thick n-type epilayer having a net donor density of 0.71015 cm-3. Buried gate regions were formed by the selective implantation of high energy (up to 2 MeV) aluminium performed at 600 °C. Nitrogen was implanted at temperature of 400 °C to form a heavily doped blanket source region. Post-implantation annealing was carried out at the atmospheric pressure in argon using a graphite capping layer. Fabricated normally-on devices with source contact diameter of 0.2 mm were tested at temperatures up to 500 °C and current densities up to 270 A/cm2. The specific on-resistance of a completely open 4H-SiC BGSIT was 34 mcm2 and showed a thermally activated behaviour at temperatures up to 500 °C.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
735-738
DOI
10.4028/www.scientific.net/MSF.615-617.735
Citation
K. Vassilevski, I. P. Nikitina, A. B. Horsfall, N. G. Wright, A. G. O'Neill, R. Gwilliam, C. M. Johnson, "Silicon Carbide Static Induction Transistor with Implanted Buried Gate", Materials Science Forum, Vols. 615-617, pp. 735-738, 2009
Online since
March 2009
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