Paper Title:
Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)
  Abstract

Short-circuit capabilities of silicon carbide static induction transistors with the buried gate structures (BGSITs) have been measured for the first time, and have been followed by 2D device simulations. The short-circuit operation of the normally-on type BGSITs is characterized by an abrupt decrease in the output current through a high peak in the initial phase of the short-circuit period, which is distinguished from that of the conventional IGBTs and power MOSFETs. This operation is caused by the inherent operation of the SITs including the non-saturating current-voltage characteristics with the unipolar operation. Decreasing the channel width adequately is a useful method to increase the short-circuit capability.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
739-742
DOI
10.4028/www.scientific.net/MSF.615-617.739
Citation
K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, K. Arai, "Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)", Materials Science Forum, Vols. 615-617, pp. 739-742, 2009
Online since
March 2009
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Price
$32.00
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