Paper Title:
Performance of 60 A, 1200 V 4H-SiC DMOSFETs
  Abstract

Large area (8 mm x 7 mm) 1200 V 4H-SiC DMOSFETs with a specific on-resistance as low as 9 m•cm2 (at VGS = 20 V) able to conduct 60 A at a power dissipation of 200 W/cm2 are presented. On-resistance is fairly stable with temperature, increasing from 11.5 m•cm2 (at VGS = 15 V) at 25°C to 14 m•cm2 at 150°C. The DMOSFETs exhibit avalanche breakdown at 1600 V with the gate shorted to the source, although sub-breakdown leakage currents up to 50 A are observed at 1200 V and 200°C due to the threshold voltage lowering with temperature. When switched with a clamped inductive load circuit from 65 A conducting to 750 V blocking, the turn-on and turn-off energies at 150°C were less than 4.5 mJ.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
749-752
DOI
10.4028/www.scientific.net/MSF.615-617.749
Citation
B. A. Hull, C. Jonas, S. H. Ryu, M. K. Das, M. J. O'Loughlin, F. Husna, R. Callanan, J. Richmond, A. K. Agarwal, J. W. Palmour, C. Scozzie, "Performance of 60 A, 1200 V 4H-SiC DMOSFETs", Materials Science Forum, Vols. 615-617, pp. 749-752, 2009
Online since
March 2009
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Price
$32.00
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