Paper Title:
Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
  Abstract

4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has a top channel on the (0001) face and side-wall channels on the {11-20} face have been fabricated. The three-dimensional gate structures with a 1-5 m width and 0.8 m height have been formed by reactive ion etching, and the gate oxide has been deposited by plasma-enhanced chemical vapor deposition and then annealed in N2O ambient at 1300°C. The fabricated MOSFETs have exhibited superior characteristics: ION / IOFF, the subthreshold swing and VTH are 1010, 250 mV/decade and 3.5 V, respectively. The drain current normalized by the gate width is increasing with decreasing the gate width. The normalized drain current of a 1 m-wide MOSFET is ten times higher than that of a conventional planar MOSFET.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
753-756
DOI
10.4028/www.scientific.net/MSF.615-617.753
Citation
Y. Nanen, H. Yoshioka, M. Noborio, J. Suda, T. Kimoto, "Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure", Materials Science Forum, Vols. 615-617, pp. 753-756, 2009
Online since
March 2009
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