Paper Title:
Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
  Abstract

The electrical characteristics of MOSFETs fabricated on 4H-SiC with a process based on N implantation in the channel region before the growth of the gate oxide are reported as a function of the N concentration at the SiO2/SiC interface up to 6  1019 cm-3. The field effect mobility improves with increasing N concentration. At room temperature values change from 4 cm2/Vs for the not implanted sample up to 42 cm2/Vs for the sample with the highest N concentration. Furthermore, the field effect mobility increases with temperature and presents values above 60 cm2/Vs at 200 °C. The MOSFETs with the better electrical characteristics (higher mobility, lower threshold voltage, lower subthreshold swing) were fabricated by a low thermal budget oxidation process, thank to the use of a high N implantation dose able to produce an amorphous SiC surface layer. A strong correlation among the increasing of the N concentration at the SiO2/SiC interface, the reduction of the interface state density located near the conduction band and the improvement of the MOSFETs performance was obtained.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
761-764
DOI
10.4028/www.scientific.net/MSF.615-617.761
Citation
A. Poggi, F. Moscatelli, S. Solmi, R. Nipoti, F. Tamarri, G. Pizzochero, "Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET", Materials Science Forum, Vols. 615-617, pp. 761-764, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
971
Authors: Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti
Abstract:Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted...
639
Authors: Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Roberta Nipoti
Abstract:4H-SiC p-type MOS capacitors fabricated by wet oxidation of SiC preamorphized by nitrogen ion (N+) implantation have been investigated. The...
651
Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Bengt G. Svensson
Abstract:This work is focusing on the effect of a high concentration of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface in...
533
Authors: Toru Hiyoshi, Takeyoshi Masuda, Keiji Wada, Shin Harada, Yasuo Namikawa
Chapter 6: Interface Characterization
Abstract:In this paper, we characterized MOS devices fabricated on 4H-SiC (0-33-8) face. The interface state density of SiO2/4H-SiC(0-33-8)...
506