Paper Title:
High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
  Abstract

Conventional MOSFETs and Hall-bar MOSFETs are fabricated side by side by over-oxidation of N-implanted or N-/Al-coimplanted 4H-SiC layers. It is demonstrated that the N-/Al-coimplanted MOSFETs possess a positive threshold voltage at room temperature and reach high values of the channel mobility. The effective electron mobility and Hall mobility in Hall-bar MOSFETs are 31 cm2/Vs and 150 cm2/Vs, respectively, indicating a high density of interface traps in spite of the excellent high mobility values.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
765-768
DOI
10.4028/www.scientific.net/MSF.615-617.765
Citation
S. A. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger, G. Pensl, M. Noborio, T. Kimoto, "High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer", Materials Science Forum, Vols. 615-617, pp. 765-768, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Florin Ciobanu, Thomas Frank, Gerhard Pensl, Valeri V. Afanas'ev, Sheron Shamuilia, Adolf Schöner, Tsunenobu Kimoto
Abstract:A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/ptype 4H-SiC epilayers prior to a standard oxidation...
991
Authors: Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
971
Authors: Thomas Frank, Svetlana Beljakowa, Gerhard Pensl, Tsunenobu Kimoto, Valeri V. Afanas'ev
Abstract:In n-type 4H-SiC, over-oxidation of an implanted surface-near, Gaussian nitrogen-profile results in MOS capacitors, which possess a...
555
Authors: Yuichiro Nanen, Bernd Zippelius, Svetlana Beljakowa, Lia Trapaidze, Michael Krieger, Tsunenobu Kimoto, Gerhard Pensl
Abstract:The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect Transistors...
487
Authors: Toru Hiyoshi, Takeyoshi Masuda, Keiji Wada, Shin Harada, Yasuo Namikawa
Chapter 6: Interface Characterization
Abstract:In this paper, we characterized MOS devices fabricated on 4H-SiC (0-33-8) face. The interface state density of SiO2/4H-SiC(0-33-8)...
506