Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 77-80 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.77 |
| Citation | Bernd Thomas et al., 2009, Materials Science Forum, 615-617, 77 |
| Online since | March, 2009 |
| Authors | Bernd Thomas, Christian Hecht, Birgit Kallinger |
| Keywords | Epitaxial Layer, Hot-Wall CVD, Multi-Wafer CVD, Silicon Carbide (SiC) |
| Abstract | In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a commercially available hot-wall multi-wafer CVD system. For the first time we show results of a low-doped full-loaded 73” run on 4° off-oriented substrates with a layer thickness of more than 70 µm. The target doping concentration of 1.2×1015 cm-3 is suitable for blocking voltages > 6 kV. Results on doping, thickness and wafer-to-wafer homogeneities are shown. The surface quality of the grown layers was characterized by AFM. The density of different types of dislocations was determined by Defect Selective Etching. |
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