Paper Title:
Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV
  Abstract

In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a commercially available hot-wall multi-wafer CVD system. For the first time we show results of a low-doped full-loaded 73” run on 4° off-oriented substrates with a layer thickness of more than 70 µm. The target doping concentration of 1.2×1015 cm-3 is suitable for blocking voltages > 6 kV. Results on doping, thickness and wafer-to-wafer homogeneities are shown. The surface quality of the grown layers was characterized by AFM. The density of different types of dislocations was determined by Defect Selective Etching.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
77-80
DOI
10.4028/www.scientific.net/MSF.615-617.77
Citation
B. Thomas, C. Hecht, B. Kallinger, "Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV", Materials Science Forum, Vols. 615-617, pp. 77-80, 2009
Online since
March 2009
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Price
$32.00
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