Paper Title:
Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
  Abstract

The effects of using a graphite capping layer during implant activation anneal on the performance of 4H-SiC MOSFETs has been evaluated. Two sets of samples, one with the graphite cap and another without, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175°C for 2hrs were used for characterization. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted for the two processes.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
773-776
DOI
10.4028/www.scientific.net/MSF.615-617.773
Citation
H. Naik, K. Tang, T. P. Chow, "Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs", Materials Science Forum, Vols. 615-617, pp. 773-776, 2009
Online since
March 2009
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