Paper Title:
Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
  Abstract

The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001), (000-1) and (11-20) oriented SiC substrates were used to fabricate the MOSFETs, with a gate oxide process consisting of a low- temperature deposited oxide followed by NO anneal at 1175°C for 2hrs. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. Temperature characterization up to 225°C was also performed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
785-788
DOI
10.4028/www.scientific.net/MSF.615-617.785
Citation
H. Naik, K. Tang, T. Marron, T. P. Chow, J. Fronheiser, "Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates", Materials Science Forum, Vols. 615-617, pp. 785-788, 2009
Online since
March 2009
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$32.00
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