Paper Title:
Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers
  Abstract

Silicon Carbide (SiC) based metal oxide semiconductor field effect transistors (MOSFETs) were fabricated and characterized using gated hall measurements with different p-type substrate doping concentration (7.2X1016cm-3 and 2X1017 cm-3). An interface trap state density of 5X1013 cm-2eV-1 was observed nearly 0.1 eV above the conduction band edge leading to the conclusion that these states are present in the silicon dioxide rather than the interface. The Hall mobility of the MOSFETs decreased from 26.5 to 20 cm2/Vs as the doping was increased from 7.2X1016 to 2X1017cm-3. The decrease in mobility is primarily due to an increase in the surface electric field that causes an increase in surface roughness scattering. The inversion layer mobility when plotted as a function of average surface electric field is not independent of doping concentration as is the case in silicon MOSFETs because the dominant scattering mechanism is not phonon scattering.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
801-804
DOI
10.4028/www.scientific.net/MSF.615-617.801
Citation
V. Tilak, K. Matocha, G. Dunne, "Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers", Materials Science Forum, Vols. 615-617, pp. 801-804, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A. Savtchouk, E. Oborina, A.M. Hoff, J. Lagowski
755
Authors: Ho Keun Song, Jeong Hyun Moon, Jeong Hyuk Yim, Hyeong Joon Kim
Abstract:In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC...
215
Authors: Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via
Abstract:A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen...
127
Authors: Ji Cheng Zhou, Yong Min Chen
Abstract:The electronic properties of the solar cells were greatly influenced by the aluminum atomic concentration in Al-BSF region under that the...
1690
Authors: Xiao Feng Zhuang, Qing Kai Zeng, Bing Ren, Zhen Hua Wang, Yue Lu Zhang, Li Ya Shen, Mei Bi, Jian Huang, Ke Tang, Ling Yun Shi, Yi Ben Xia, Lin Jun Wang
Chapter 3: Coatings, Damage Mechanics
Abstract:In this paper, the threshold voltage of diamond film-based metal-semiconductor field effect transistors (MESFETs) has been simulated using...
1093