Paper Title:
Channel Hot-Carrier Effect of 4H-SiC MOSFET
  Abstract

SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
813-816
DOI
10.4028/www.scientific.net/MSF.615-617.813
Citation
L. C. Yu, K. P. Cheung, J. S. Suehle, J. P. Campbell, K. Sheng, A. J. Lelis, S. H. Ryu, "Channel Hot-Carrier Effect of 4H-SiC MOSFET", Materials Science Forum, Vols. 615-617, pp. 813-816, 2009
Online since
March 2009
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Price
$32.00
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