Paper Title:
Channel Hot-Carrier Effect of 4H-SiC MOSFET
| Periodical | Materials Science Forum (Volumes 615 - 617) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 813-816 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.813 |
| Citation | Liang Chun Yu et al., 2009, Materials Science Forum, 615-617, 813 |
| Online since | March, 2009 |
| Authors | Liang Chun Yu, Kin P. Cheung, John S. Suehle, Jason Campbell, Kuang Sheng, Aivars J. Lelis, Sei Hyung Ryu |
| Keywords | 4H-SiC, Channel Hot-Carrier Effect, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) |
| Price | US$ 28,- |
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Abstract
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.
