Low Frequency Noise in 4H-SiC MOSFETs

Palmour, John W.; Shur, Michael S.; Levinshtein, Michael E.; Rumyantsev, Sergey L.; Ivanov, Pavel A.; Das, Mrinal K.; Hull, Brett A.

My Cart

Advanced Search

Paper Titles

Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers, p.801
Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs, p.805
Implications of Threshold-Voltage Instability on SiC DMOSFET Operation, p.809
Channel Hot-Carrier Effect of 4H-SiC MOSFET, p.813
Low Frequency Noise in 4H-SiC MOSFETs, p.817
A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT, p.821
Assessment of High and Low Temperature Performance of SiC BJTs, p.825
4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile, p.829
Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability, p.833

Home > Materials Science Forum > Silicon Carbide and Related Materials 2008 > Low Frequency Noise in 4H-SiC MOSFETs

Paper Title:

Low Frequency Noise in 4H-SiC MOSFETs

Periodical	Materials Science Forum (Volumes 615 - 617)
Main Theme	Silicon Carbide and Related Materials 2008
Edited by	Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages	817-820
DOI	10.4028/www.scientific.net/MSF.615-617.817
Citation	Sergey L. Rumyantsev et al., 2009, Materials Science Forum, 615-617, 817
Online since	March, 2009
Authors	Sergey L. Rumyantsev, Michael S. Shur, Michael E. Levinshtein, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das, Brett A. Hull
Keywords	Bulk States, Channel Mobility, Interface States (or Traps), Low-Frequency Noise, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
Price	US$ 28,-

View full size

Abstract

Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.