Paper Title:
4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile
  Abstract

This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base and emitter epi-layers continuously grown in the same reactor. The 4H-SiC BJTs were designed to improve the common emitter current gain through the built-in electrical fields originating from the grading of the base doping. Continuously-grown epi-layers are also believed to be the key to increasing carrier lifetime and high current gains. The 4H-SiC BJT wafer was grown in an Aixtron/Epigress VP508, a horizontal hot-wall chemical vapor deposition reactor using standard silane/propane chemistry and nitrogen and aluminum dopants. High performance 4H-SiC BJTs based on this initial non-optimized graded base doping have been demonstrated, including a 4H-SiC BJT with a DC current gain of ~33, specific on-resistance of 2.9 mcm2, and blocking voltage VCEO of over 1000 V.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
829-832
DOI
10.4028/www.scientific.net/MSF.615-617.829
Citation
J. H. Zhang, L. Fursin, X. Q. Li, X. H. Wang, J. H. Zhao, B. L. VanMil, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill, "4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile", Materials Science Forum, Vols. 615-617, pp. 829-832, 2009
Online since
March 2009
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Price
$32.00
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