Paper Title:
Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
  Abstract

In this study, high voltage blocking (2.7 kV) implantation-free SiC Bipolar Junction Transistors with low on-state resistance (12 mΩ•cm2) and high common-emitter current gain of 50 have been fabricated. A graded base doping was implemented to provide a low resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high temperature dopant activation annealing and for avoiding generation of life-time killing defects that reduces the current gain. Also in this process large area transistors showed common-emitter current gain of 38 and open-base breakdown voltage of 2 kV.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
833-836
DOI
10.4028/www.scientific.net/MSF.615-617.833
Citation
R. Ghandi, H. S. Lee, M. Domeij, B. Buono, C. M. Zetterling, M. Östling, "Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability", Materials Science Forum, Vols. 615-617, pp. 833-836, 2009
Online since
March 2009
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Price
$32.00
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