Paper Title:
Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors
  Abstract

Surface passivation of 4H-SiC has been investigated for high current-gain bipolar junction transistors (BJTs). For the characterization of surface passivation, we have introduced the product “sp•Ls” of a surface recombination velocity (sp) and a surface diffusion length (Ls). The sp•Ls value was obtained by analyzing the I-V characteristics of pn diodes. Both BJTs and pn diodes were fabricated with several passivation methods. We have found clear correlation between the sp•Ls value and the current gain of the fabricated BJTs. Optimizing the surface passivation, we realized high performance BJTs with a current gain of 107 and a blocking voltage VCEO of 950 V.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
837-840
DOI
10.4028/www.scientific.net/MSF.615-617.837
Citation
Y. Negoro, A. Horiuchi, K. Iwanaga, S. Yokoyama, H. Hashimoto, K. Nonaka, Y. Maeyama, M. Sato, M. Shimizu, H. Iwakuro, "Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors", Materials Science Forum, Vols. 615-617, pp. 837-840, 2009
Online since
March 2009
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Price
$32.00
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