Paper Title:
Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
  Abstract

Ion implantation for selective doping of SiC is problematic due to damage generation during the process and low activation of dopants. In SiC bipolar junction transistor (BJT) the junction termination extension (JTE) can be formed without ion implantation using instead a controlled etching into the epitaxial base. This etched JTE is advantageous because it eliminates ion implantation induced damage and the need for high temperature annealing. However, the dose, which is controlled by the etched base thickness and doping concentration, plays a crucial role. In order to find the optimum parameters, device simulations of different etched base thicknesses have been performed using the software Sentaurus Device. A surface passivation layer consisting of silicon dioxide, considering interface traps and fixed trapped charge, has been included in the analysis by simulations. Moreover a comparison with measured data for fabricated SiC BJTs has been performed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
841-844
DOI
10.4028/www.scientific.net/MSF.615-617.841
Citation
B. Buono, H. S. Lee, M. Domeij, C. M. Zetterling, M. Östling, "Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE", Materials Science Forum, Vols. 615-617, pp. 841-844, 2009
Online since
March 2009
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