Paper Title:
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
  Abstract

The spectrometric characteristics of detectors based on 4H-SiC films with ion-doped p+–n junctions in a temperature range from 25 to 375 °C have been studied. The experiments with 5.8-MeV α-particles in a high-temperature chamber were performed. The interference factors of the detectors operation in a mode of spectrometry are established. The energy resolution of 1.35% is received. An increase of the efficiency of the diffusion–drift charge transport with increasing temperature has been observed. The last is explained by an increase in the diffusion length of minority carriers.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
849-852
DOI
10.4028/www.scientific.net/MSF.615-617.849
Citation
A. M. Ivanov, E. V. Kalinina, N. B. Strokan, A. A. Lebedev, "4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C", Materials Science Forum, Vols. 615-617, pp. 849-852, 2009
Online since
March 2009
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