P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates |
|
| Journal | Materials Science Forum (Volumes 615 - 617) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 85-88 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.85 |
| Citation | Philip Hens et al., 2009, Materials Science Forum, 615-617, 85 |
| Online since | March, 2009 |
| Authors | Philip Hens, Mikael Syväjärvi, Felix Oehlschläger, Peter J. Wellmann, Rositza Yakimova |
| Keywords | Compensation, Doping, Growth, Sublimation |
| Abstract | The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
