Paper Title:
P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
  Abstract

The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
85-88
DOI
10.4028/www.scientific.net/MSF.615-617.85
Citation
P. Hens, M. Syväjärvi, F. Oehlschläger, P. J. Wellmann, R. Yakimova, "P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates", Materials Science Forum, Vols. 615-617, pp. 85-88, 2009
Online since
March 2009
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Price
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