Paper Title:
Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV
  Abstract

We investigated the energy spectra in p+n 6H-SiC diodes by a wide variety of charged particles with energies up to several hundred MeV. Though Pulse Height Defect (PHD) was detected when the samples were irradiated with high energy heavy ions (322MeV-Kr and 454MeV-Xe), linearity between pulse height (peak channel) and ion energy up to 150MeV was observed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
861-864
DOI
10.4028/www.scientific.net/MSF.615-617.861
Citation
S. Onoda, N. Iwamoto, M. Murakami, T. Ohshima, T. Hirao, K. Kojima, K. Kawano, I. Nakano, "Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV", Materials Science Forum, Vols. 615-617, pp. 861-864, 2009
Online since
March 2009
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