Paper Title:
Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes
  Abstract

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
865-868
DOI
10.4028/www.scientific.net/MSF.615-617.865
Citation
S. I. Soloviev, A. V. Vert, J. Fronheiser, P. M. Sandvik, "Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes", Materials Science Forum, Vols. 615-617, pp. 865-868, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: W.S. Loh, J.P.R. David, Stanislav I. Soloviev, H.Y. Cha, Peter M. Sandvik, J.S. Ng, C. Mark Johnson
Abstract:The hole dominated avalanche multiplication characteristics of 4H-SiC Separate Absorption and Multiplication avalanche photodiodes...
1207
Authors: Stanislav I. Soloviev, Peter M. Sandvik, Alexey Vertiatchikh, K. Dovidenko, Ho Young Cha
Abstract:In this work, we observed and investigated electro-luminescence (EL) from defects in 4H-SiC avalanche photodiodes. The EL irradiance...
1211
Authors: Alexey V. Vert, Stanislav I. Soloviev, Peter M. Sandvik
Abstract:We present recent results on 4H-SiC avalanche photodiode arrays and SiC-based solid-state photomultiplier arrays suitable for ultraviolet and...
1069
Authors: Alexey V. Vert, Stanislav I. Soloviev, Peter M. Sandvik
Abstract:We present overview of achieved results on 4H-SiC avalanche photodiodes (APDs) and arrays. Cost-effective solar-blind optical filter allows...
543
Authors: Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, Jens Peter Konrath, Sigo Scharnholz, Dominique Planson
Abstract:Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to...
567