6H and 4H-SiC Avalanche Photodiodes |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 869-872 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.869 |
| Citation | L.B. Rowland et al., 2009, Materials Science Forum, 615-617, 869 |
| Online since | March, 2009 |
| Authors | L.B. Rowland, Jeffery L. Wyatt, Jody Fronheiser, Alexey V. Vert, Peter M. Sandvik, T. Borsa, J. Van Zeghbroeck, Bart Van Zeghbroeck, S. Babu |
| Keywords | (11-20), APD, a-Plane, Avalanche Photodiode, Photodiode, Sensor, Ultraviolet |
| Abstract | We report on the fabrication and testing of SiC p-i-n avalanche photodiodes. APDs of 0.25 mm2 area on a-plane (1120) 6H-SiC as well as off-axis Si face 6H and 4H-SiC were successfully fabricated. A beveled mesa was used as edge termination. Recessed windows were formed using reactive ion etching to enhance low-wavelength UV performance. We performed current-voltage tests with and without UV illumination to determine dark current, photocurrent, and gain on selected devices. Dark current was less than 1 pA at 0.5Vbr on multiple devices. Quantum efficiency of 40% or greater was observed for all orientations and polytypes. |
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