Paper Title:
6H and 4H-SiC Avalanche Photodiodes
  Abstract

We report on the fabrication and testing of SiC p-i-n avalanche photodiodes. APDs of 0.25 mm2 area on a-plane (1120) 6H-SiC as well as off-axis Si face 6H and 4H-SiC were successfully fabricated. A beveled mesa was used as edge termination. Recessed windows were formed using reactive ion etching to enhance low-wavelength UV performance. We performed current-voltage tests with and without UV illumination to determine dark current, photocurrent, and gain on selected devices. Dark current was less than 1 pA at 0.5Vbr on multiple devices. Quantum efficiency of 40% or greater was observed for all orientations and polytypes.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
869-872
DOI
10.4028/www.scientific.net/MSF.615-617.869
Citation
L.B. Rowland, J. L. Wyatt, J. Fronheiser, A. V. Vert, P. M. Sandvik, T. Borsa, J. Van Zeghbroeck, B. Van Zeghbroeck, S. Babu, "6H and 4H-SiC Avalanche Photodiodes", Materials Science Forum, Vols. 615-617, pp. 869-872, 2009
Online since
March 2009
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Price
$32.00
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