Paper Title:
Solar-Blind 4H-SiC Avalanche Photodiodes
  Abstract

In this work, solar-blind UV 4H-SiC avalanche photodetectors were fabricated and tested in linear and Geiger modes. APDs with both PIN and separate absorption and multiplication (SAM) structures were investigated. PIN structures demonstrated higher quantum efficiencies while the SAM structure exhibit lower leakage currents. Deposition of a thin film optical filter on top of the devices was used to provide a high photon rejection ratio of (Stas add value here). However, an external filter showed a better photon rejection ratio compared to the deposited one by about one order of magnitude.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
873-876
DOI
10.4028/www.scientific.net/MSF.615-617.873
Citation
S. I. Soloviev, A. V. Vert, J. Fronheiser, P. M. Sandvik, "Solar-Blind 4H-SiC Avalanche Photodiodes", Materials Science Forum, Vols. 615-617, pp. 873-876, 2009
Online since
March 2009
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Price
$32.00
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