Chloride-Based SiC Epitaxial Growth |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 89-92 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.89 |
| Citation | Henrik Pedersen et al., 2009, Materials Science Forum, 615-617, 89 |
| Online since | March, 2009 |
| Authors | Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, A. Lundskog, Erik Janzén |
| Keywords | Chloride-Based CVD Growth, Epilayer, High Growth Rate |
| Abstract | Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the Cl/Si-ratio has on the growth have been studied. MTS is showed to be the most efficient precursor; the growth can be hindered by to much chlorine in the gas mixture. The Cl/Si-ratio is also found to be a process parameter that affects the amount of incorporated nitrogen in the epilayers. |
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