Paper Title:
Chloride-Based SiC Epitaxial Growth
  Abstract

Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the Cl/Si-ratio has on the growth have been studied. MTS is showed to be the most efficient precursor; the growth can be hindered by to much chlorine in the gas mixture. The Cl/Si-ratio is also found to be a process parameter that affects the amount of incorporated nitrogen in the epilayers.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
89-92
DOI
10.4028/www.scientific.net/MSF.615-617.89
Citation
H. Pedersen, S. Leone, A. Henry, F. C. Beyer, A. Lundskog, E. Janzén, "Chloride-Based SiC Epitaxial Growth", Materials Science Forum, Vols. 615-617, pp. 89-92, 2009
Online since
March 2009
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Price
$32.00
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