Paper Title:
Applications of SiC-Transistors in Photovoltaic Inverters
  Abstract

Currently there are several silicon carbide (SiC) field effect or bipolar transistor types in development with normally-on and normally-off characteristics. It is not yet clear, which transistor type will prevail in the market and which will remain a niche product. This is not only determined by their electrical characteristics, but also by their acceptance by engineers. In this paper the implementation and the performance of 1200 V / 20 A / 100 m SiC-DMOSFETS and 1200 V / 12 A / 125 m normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
895-898
DOI
10.4028/www.scientific.net/MSF.615-617.895
Citation
D. Kranzer, B. Burger, N. Navarro, O. Stalter, "Applications of SiC-Transistors in Photovoltaic Inverters", Materials Science Forum, Vols. 615-617, pp. 895-898, 2009
Online since
March 2009
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Price
$32.00
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