Paper Title:
100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules
  Abstract

The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200°C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
899-902
DOI
10.4028/www.scientific.net/MSF.615-617.899
Citation
P. A. Losee, K. Matocha, S. Arthur, E. Delgado, R. Beaupre, A. Pautsch, R. R. Rao, J. Nasadoski, J. L. Garrett, Z. Stum, L. Stevanovic, R. A. Conte, K. Monaghan, "100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules", Materials Science Forum, Vols. 615-617, pp. 899-902, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Shin Ichi Kinouchi, Hiroshi Nakatake, T. Kitamura, S. Azuma, S. Tominaga, Shuhei Nakata, Yukiyasu Nakao, T. Oi, Tatsuo Oomori
Abstract:A compact SiC converter having power densities about 9 W/cm3 is designed and fabricated. It is confirmed that the converter operates in a...
1223
Authors: Shuhei Nakata, Shin Ichi Kinouchi, T. Sawada, T. Oi, Tatsuo Oomori
Abstract:For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We...
903
Authors: Zhong Min Yao, Xi Guang Liu, Ya Zhen Wang
Chapter 3: Advanced Manufacturing Technology (1)
Abstract:With the application scale and area of the building PV power station continuous extension, data transmission and monitoring management of the...
1259
Authors: Wen Lun Cao, Bei Chen, Yu Yao He
Chapter 3: Advanced Test and Measurement
Abstract:The data acquisition and life prediction system of gas laser is designed in this paper. The ARM STM3210B module is used as the core of...
527
Authors: Ran Li, Rui Ding, Zi Jian Min, Hui Mei Yuan
Chapter 6: Electronic and Radio Engineering
Abstract:Taking into account the efficiency, cost-effectiveness and reliability of power supply, redundant parallel power supply controlled by...
1568