Paper Title:
Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs
  Abstract

For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We have successfully completed the operation of the SiC inverter module at continuous rating of up to 11kW with carrier frequency of 20 kHz. The power loss during the operation was measured by calorimetric method and the results showed that the loss was considerably reduced by 30% of a similar rating commercialized IGBT power module at carrier frequency of 15 kHz.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
903-906
DOI
10.4028/www.scientific.net/MSF.615-617.903
Citation
S. Nakata, S. I. Kinouchi, T. Sawada, T. Oi, T. Oomori, "Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs", Materials Science Forum, Vols. 615-617, pp. 903-906, 2009
Online since
March 2009
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$32.00
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