Paper Title:
Comparison of SiC-JFET and Si-IGBT Inverter Losses
  Abstract

Because of the fixed chip size of available sample devices a comparison of SiC-JFET and silicon IGBT with another fixed chip size necessitates the regard to the active area of the chip. The paper presents measurement results considering the active area and shows a comparison of inverter losses depending on junction temperature and switching frequency.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
907-910
DOI
10.4028/www.scientific.net/MSF.615-617.907
Citation
I. Koch, W. R. Canders, "Comparison of SiC-JFET and Si-IGBT Inverter Losses", Materials Science Forum, Vols. 615-617, pp. 907-910, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Shin Ichi Kinouchi, Hiroshi Nakatake, T. Kitamura, S. Azuma, S. Tominaga, Shuhei Nakata, Yukiyasu Nakao, T. Oi, Tatsuo Oomori
Abstract:A compact SiC converter having power densities about 9 W/cm3 is designed and fabricated. It is confirmed that the converter operates in a...
1223
Authors: Shuhei Nakata, Shin Ichi Kinouchi, T. Sawada, T. Oi, Tatsuo Oomori
Abstract:For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We...
903
Authors: Peng Fei Huang, Xue Chao Liu, Li Jun Sha, Zhen Yang Lu
Chapter 09: Mechanical Manufacturing Processes and Equipment
Abstract:With rapid economic development and global manufacturing competition, developing a low heat input and high reliability full digital welding...
741
Authors: Leonid Fursin, Frank Hoffmann, John Hostetler, Xue Qing Li, Matthew Fox, Petre Alexandrov, Mari Anne Gagliardi, Mark Holveck
Chapter 10: Device and Application
Abstract:A growing demand for smart and flexible photovoltaic power conversion and pulsed-power systems is leading to rapid development and...
982
Authors: Yuichiro Nanen, Masatoshi Aketa, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura
4.2 MOSFETs
Abstract:Dynamic and static characteristics of SiC power MOSFETs at high temperature up to 380°C were investigated. Investigated devices have...
885