Paper Title:
High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
  Abstract

The expansion of the electrical communications and distribution networks strongly contribute to the increase in the risks of appearance of defaults, such as over-voltage and/or over-current. These developments promote the emergence of safety devices for serial protection commonly named Current Limiting Devices (CLD's). This work presents the design, manufacture and characterization of silicon carbide accuMOSFET of high power density ratings. Components able to limit the current up to 450A @ 350V were manufactured and characterized. Specific characterization test benches were developed, able to provide high energy pulses required for characterization. CLDs behavior subjected to short overloads has been measured experimentally and analyzed be means of simulations for long-time overloads. A maximum sustainable high energy of 35 Joules has been estimated. This achievement give opportunities to build new architectures of serial protection systems.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
911-914
DOI
10.4028/www.scientific.net/MSF.615-617.911
Citation
D. Tournier, P. Bevilacqua, D. Planson, H. Morel, P. Brosselard, J. Montserrat, A. Lhorte, S. Carcouet, D. Leonard, "High Power Density SiC 450A AccuMOSFET for Current Limiting Applications", Materials Science Forum, Vols. 615-617, pp. 911-914, 2009
Online since
March 2009
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Price
$32.00
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