Paper Title:
Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design
  Abstract

The design of analog integrated circuits, for instance, the operational amplifiers, have been widely perfected with devices and processes available in silicon. However, analogous circuits have been the subject of research in Silicon Carbide (SiC). Among SiC devices, 4H-SiC Lateral-Trench JFET (LTJFET) transistor offers advantages and new opportunities to make affordable and reliable analog integrated circuits for harsh environment. In this paper: (1) SiC LTJFET is characterized for modeling and simulation, (2) effect of temperature variation on SiC LTJFET threshold voltage and small signal parameters are reported, (3) gain performance and small signal parameters of the basic analog circuit block, Common Source (CS) amplifier, based on the variation of the load transistors threshold voltage (Vth) are studied and analyzed, and (4) frequency and transient response of the cascoded CS amplifier (CS-Cas) are reported.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
915-918
DOI
10.4028/www.scientific.net/MSF.615-617.915
Citation
A. Maralani, M. S. Mazzola, D. C. Sheridan, I. Sankin, V. Bondarenko, "Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design", Materials Science Forum, Vols. 615-617, pp. 915-918, 2009
Online since
March 2009
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Price
$32.00
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