Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 929-932 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.929 |
| Citation | Philip G. Neudeck et al., 2009, Materials Science Forum, 615-617, 929 |
| Online since | March, 2009 |
| Authors | Philip G. Neudeck, David J. Spry, Liang Yu Chen, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura J. Evans, Roger D. Meredith, Terry L. Ferrier, Michael J. Krasowski, Norman F. Prokop |
| Keywords | 6H-SiC, Amplifier, High Temperature, Integrated Circuits, JFET, Logic Gate |
| Abstract | This paper updates the long-term 500 °C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 °C with less than 10% degradation in linear I-V characteristics. Several simple digital and analog demonstration integrated circuits successfully operated for 2000-6500 hours at 500 °C before failure. |
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