Paper Title:
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
  Abstract

Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
93-96
DOI
10.4028/www.scientific.net/MSF.615-617.93
Citation
S. Leone, H. Pedersen, A. Henry, S. P. Rao, O. Kordina, E. Janzén, "Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition", Materials Science Forum, Vols. 615-617, pp. 93-96, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Rositza Yakimova, Mikael Syväjärvi, R.R Ciechonski, Qamar-ul Wahab
201
Authors: Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga
Abstract:Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face...
93
Authors: Yasuo Hirabayashi, Satoru Kaneko, Kensuke Akiyama
Abstract:The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without...
247
Authors: Kinga Kościewicz, Wlodek Strupiński, Dominika Teklinska, Krystyna Mazur, Mateusz Tokarczyk, Grzegorz Kowalski, Andrzej Roman Olszyna
Abstract:A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers,...
95
Authors: Takashi Aigo, Wataru Ito, Hiroshi Tsuge, Hirokatsu Yashiro, Masakazu Katsuno, Tatsuo Fujimoto, Wataru Ohashi
Chapter 2: SiC Epitaxial Growth
Abstract:4H-SiC epitaxial growth on 2˚ off-axis substrates using trichlorosilane (TCS) is presented. Good surface morphology was obtained for...
101