Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 93-96 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.93 |
| Citation | Stefano Leone et al., 2009, Materials Science Forum, 615-617, 93 |
| Online since | March, 2009 |
| Authors | Stefano Leone, Henrik Pedersen, Anne Henry, Shailaja P. Rao, Olof Kordina, Erik Janzén |
| Keywords | Chlorine-Based Chemical Vapor Deposition, High Growth Rate, On-Axis |
| Abstract | Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h. |
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