Paper Title:
Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN
  Abstract

Presented are the results of studies on Ti-Al-N MAX phase formation in thin film multilayers of Ti, Al and TiN deposited on n-type GaN by magnetron sputtering. Two approaches to phase formation are shown, annealing Ti-Al-TiN multilayers at 600oC in argon and annealing Ti/Al multilayers at 600oC in nitrogen. Samples are characterized by means of High Resolution X-Ray Diffraction and Secondary Ion Mass Spectrometry profiling. As MAX phases are very stable at high temperatures the potential of their application as ohmic contacts to n-GaN devices is discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
947-950
DOI
10.4028/www.scientific.net/MSF.615-617.947
Citation
M. A. Borysiewicz, E. Kamińska, A. Piotrowska, I. Pasternak, R. Jakieła, E. Dynowska, "Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN", Materials Science Forum, Vols. 615-617, pp. 947-950, 2009
Online since
March 2009
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Price
$32.00
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