Paper Title:
Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
  Abstract

Gallium nitride (GaN) and related alloys (AlxGa1-xN) are promising semiconductors for high-frequency and high-power devices applications. In particular, the growth of AlGaN/GaN heterostructures on SiC substrates, due to the high thermal conductivity of SiC, can lead to significant improvement in the device performances. An important issue in the fabrication of AlGaN/GaN devices is the influence of the required thermal budget (700-900°C) on the properties of Ohmic contacts and device isolation. In this work, the influence of thermal annealing on the fabrication of AlGaN/GaN devices was studied. Ti/Al/Ni/Au multilayers led to an Ohmic behavior with a specific resistance c in the 10-5 cm2 range upon annealing between 750°C and 850°C. The electrical behavior of Ohmic contacts was correlated with the evolution of the formed phases and with the temperature behavior of c. The stability of the inter-device isolation obtained by nitrogen-implantation during annealing at these temperatures was also monitored.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
967-970
DOI
10.4028/www.scientific.net/MSF.615-617.967
Citation
F. Roccaforte, F. Iucolano, F. Giannazzo, G. Moschetti, C. Bongiorno, S. Di Franco, V. Puglisi, G. Abbondanza, V. Raineri, "Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures", Materials Science Forum, Vols. 615-617, pp. 967-970, 2009
Online since
March 2009
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Price
$35.00
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