Paper Title:
Two Broadband GaN MMIC Power Amplifiers for EW Systems
  Abstract

This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These amplifiers have scalable output-stage periphery of 4 and 8 mm. The amplifiers are based on 1 mm AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They were fabricated in the European foundry SELEX Sistemi Integrati, which has a gate process technology of 0.5 μm. The 4 mm amplifier has exhibited an output power of 15 W and the 8 mm of 28 W at Vds=25 V in pulsed conditions. The best power performance in continuous wave are 10.5 W and 15 W for 4 mm and 8 mm, respectively. Better than 20% PAE over the 2-6 GHz frequency range is achieved in CW.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
975-978
DOI
10.4028/www.scientific.net/MSF.615-617.975
Citation
M. A. Gonzalez-Garrido, J. Grajal, P. Cubilla, C. Lanzieri, A. Cetronio, "Two Broadband GaN MMIC Power Amplifiers for EW Systems", Materials Science Forum, Vols. 615-617, pp. 975-978, 2009
Online since
March 2009
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$32.00
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