Paper Title:
Metal Contacts to Boron-Doped Diamond
  Abstract

This paper describes the fabrication of Ni and Ti contacts to single crystal, boron-doped diamond. The electrical performance of metal-diamond contacts has been investigated using current-voltage I(V) characterization of circular transmission line model (CTLM) test structures. X-ray photoelectron spectroscopy (XPS) analysis of Ti/diamond contacts has been performed and is correlated with CTLM results. Post deposition annealing of metal-diamond contacts has a dramatic influence on contact resistivity, with lower resistances observed after annealing at 900°C. Specific contact resistances as low as 9 x 10-5 Ω.cm2 have been obtained. The effect of doping (via epitaxial growth and boron implantation) on metal-diamond contacts is also reported.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
995-998
DOI
10.4028/www.scientific.net/MSF.615-617.995
Citation
M. Lodzinski, O. J. Guy, A. Castaing, S. Batcup, S.P. Wilks, P. Igic, R.S. Balmer, C.J.H. Wort, R. Lang, "Metal Contacts to Boron-Doped Diamond", Materials Science Forum, Vols. 615-617, pp. 995-998, 2009
Online since
March 2009
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Price
$32.00
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