Paper Title
Page
Authors: Stéphane Morata, Frank Torregrosa, Thierry Bouchet
Abstract:This paper presents a new simple hand using and fast simulator for ion implantation in 4H-SiC substrates developed by IBS for ESCAPEE...
449
Authors: A.V. Bolotnikov, Peter G. Muzykov, Anant K. Agarwal, Qing Chun Jon Zhang, Tangali S. Sudarshan
Abstract:In this work the analysis of thermal diffusion of boron carried out from vapor phase was performed. Two-branch diffusion associated with...
453
Authors: Filippo Giannazzo, Martin Rambach, Dario Salinas, Fabrizio Roccaforte, Vito Raineri
Abstract:We studied the evolution of the electrical activation with annealing temperature and time in 4H-SiC implanted with Al ions at room...
457
Authors: Alain Declémy, Cyril Dupeyrat, Lionel Thomé, Aurelien Debelle
Abstract:Silicon carbide (SiC) could be a good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on...
461
Authors: Hervé Peyre, Jörg Pezoldt, M. Voelskow, Wolfgang Skorupa, Jean Camassel
Abstract:A detailed investigation of the Ge concentration in implanted samples has been carried out by SIMS and the effects affecting the depth...
465
Authors: Filippo Fabbri, Francesco Moscatelli, Antonella Poggi, Roberta Nipoti, Anna Cavallini
Abstract:Capacitance versus Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+n diodes with Al+ implanted...
469
Authors: Evgenia V. Kalinina, M.V. Zamoryanskaya, E.V. Kolesnikova, Alexander A. Lebedev
Abstract:Structural features of 4H-SiC structures with CVD epitaxial layers, subjected to high-dose Al ion implantation and short high-temperature...
473
Authors: Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda
Abstract:Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray...
477
Authors: Takeshi Mitani, Ryo Hattori, Masanobu Yoshikawa
Abstract:Depth profiles of ion-implantation induced defect centers have been investigated by cross-sectional CL measurements in the energy range from...
481
Authors: Masataka Satoh, Takeshi Jinushi, Tohru Nakamura
Abstract:We investigate the structural and electrical properties of polycrystalline 3C-SiC obtained from P ion implanted 4H-SiC with the box-shaped...
485
Showing 111 to 120 of 247 Paper Titles