Paper Title
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Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Abstract:We proposed a kinetic model for SiC oxidation, named ‘silicon and carbon (Si-C) emission model’, taking into account the emission of Si and C...
489
Authors: Aveek Chatterjee, Kevin Matocha
Abstract:We explain the phenomenon of sodium enhanced oxidation (SEO) using computational techniques, and analyze a set of probable hypotheses, which...
493
Authors: Lars S. Løvlie, Ioana Pintilie, S. Kumar C.P., Ulrike Grossner, Bengt G. Svensson, Svetlana Beljakowa, Sergey A. Reshanov, Michael Krieger, Gerhard Pensl
Abstract:The purpose of this work is to compare the density of shallow interface states (Dit) at the interface of SiO2/SiC MOS capacitors as deducted...
497
Authors: Pawel A. Sobas, Ulrike Grossner, Bengt G. Svensson
Abstract:Using impedance spectroscopy (IS) for the characterization of SiO2/4H-SiC (MOS) structures, insight on the capacitive and resistive...
501
Authors: H. Seki, T. Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Abstract:We have characterized 4H-SiC–oxide interfaces fabricated by thermal oxidation of SiC using spectroscopic ellipsometry in the wide spectral...
505
Authors: Toshiyuki Takaku, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Abstract:Thermal oxidation process of silicon carbide in ultra-thin oxide regime has been studied by performing in-situ and real time spectroscopic...
509
Authors: Jody Fronheiser, Kevin Matocha, Vinayak Tilak, Leonard C. Feldman
Abstract:The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion...
513
Authors: Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, K. Kojima, K. Kawano
Abstract:Single event transient currents induced in 6H-SiC MOS capacitors are measured by using oxygen ions. Charges collected from the samples are...
517
Authors: Michael Grieb, Masato Noborio, Dethard Peters, Anton J. Bauer, Peter Friedrichs, Tsunenobu Kimoto, Heiner Ryssel
Abstract:In this work, the electrical characteristics and the reliability of 80nm thick deposited oxides annealed in NO and N2O on the 4H-SiC Si-face...
521
Authors: Heiji Watanabe, Yuu Watanabe, Makoto Harada, Yusuke Kagei, Takashi Kirino, Takuji Hosoi, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura
Abstract:We propose a treatment combining nitrogen plasma exposure and forming gas annealing (FGA) to improve the electrical properties of SiO2/SiC...
525
Showing 121 to 130 of 247 Paper Titles