Paper Title
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Authors: N. Kwietniewski, Krystyna Gołaszewska, T.T. Piotrowski, W. Rzodkiewicz, Tomasz Gutt, M. Sochacki, Jan Szmidt, Anna Piotrowska
Abstract:The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the thermal...
529
Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Bengt G. Svensson
Abstract:This work is focusing on the effect of a high concentration of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface in...
533
Authors: Fredrik Allerstam, Einar Ö. Sveinbjörnsson
Abstract:In this work the effect of oxidation temperature of 4H-SiC on the density of near-interface traps is studied. It is seen that the portion of...
537
Authors: Takuji Hosoi, Makoto Harada, Yusuke Kagei, Yuu Watanabe, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe
Abstract:We propose the use of an aluminum oxynitride (AlON) gate insulator for 4H-SiC MIS devices. Since direct deposition of AlON on 4H-SiC...
541
Authors: Chee Chung Hoong, Kuan Yew Cheong
Abstract:The effects of post deposition annealing in forming gas (5 % H2 in 95 % N2) ambient at different temperatures (850, 950, and 1050 oC) on...
545
Authors: Shinsuke Harada, Makoto Kato, Sachiko Ito, Kenji Suzuki, Takasumi Ohyanagi, Junji Senzaki, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:Reliability of the gate oxide is influenced by the device structure and the processes. In the SiC MOSFET, the surface morphology is degraded...
549
Authors: Tetsuo Hatakeyama, Hiroshi Kono, Takuma Suzuki, Junji Senzaki, Kenji Fukuda, Takashi Shinohe, Kazuo Arai
Abstract:This paper discusses the issues regarding reliability of large-area (up to 9mm2) gate oxide on the C-face of 4H-SiC. We first show that the...
553
Authors: Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama, Kenji Fukuda, Takashi Shinohe, Kazuo Arai
Abstract:The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was...
557
Authors: Satoshi Tanimoto, Hiromichi Oohashi
Abstract:One major problem when operating SiC power devices at a junction temperature of more than 200°C is the pronounced degradation of the...
561
Authors: Alexander A. Lebedev, A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, Raisa V. Konakova, Ya.Ya. Kudryk, Victor V. Milenin, V.N. Sheremet
Abstract:We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the...
565
Showing 131 to 140 of 247 Paper Titles