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Silicon Carbide and Related Materials 2008

Materials Science Forum Volumes 615 - 617

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• p979 Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction   [ 180 K ]
  Authors: Hiroki Miyake, Tsunenobu Kimoto, Jun Suda
• p983 Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates   [ 1 M ]
  Authors: Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Paul Heimann, S. Nagata, Albrecht Winnacker
• p987 Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)   [ 6 M ]
  Authors: Arnaud Claudel, Elisabeth Blanquet, Didier Chaussende, D. Pique, Michel Pons
• p991 Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD   [ 93 K ]
  Authors: Yoshiaki Mokuno, Akiyoshi Chayahara, Hideaki Yamada, Nobuteru Tsubouchi
• p995 Metal Contacts to Boron-Doped Diamond   [ 208 K ]
  Authors: Michal Lodzinski, Owen J. Guy, A. Castaing, S. Batcup, S.P. Wilks, P. Igic, R.S. Balmer, C.J.H. Wort, R. Lang
• p999 Recent Progress of Diamond Device toward Power Application   [ 216 K ]
  Authors: Shinichi Shikata, Kazuhiro Ikeda, Ramanujam Kumaresan, Hitoshi Umezawa, Natsuo Tatsumi
• p1003 Device Characteristics Dependence on Diamond SDBs Area   [ 220 K ]
  Authors: Hitoshi Umezawa, Kazuhiro Ikeda, Ramanujam Kumaresan, Natsuo Tatsumi, Shinichi Shikata