Paper Title
Page
Authors: Tatsunori Sugimoto, Toshiya Noro, Satarou Yamaguchi, Hideyoshi Majima, Tomohisa Kato
Abstract:Diamond saw is generally used to make the silicon carbide (SiC) wafers from ingots, but it takes long time for cutting. We have used the...
609
Authors: Matthias Holz, Jochen Hilsenbeck, Ralf Otremba, Alexander Heinrich, Peter Türkes, Roland Rupp
Abstract:SiC power devices have reached a high market penetration, especially for high-voltage applications like switch mode power supplies. In the...
613
Authors: Marcel Placidi, Marcin Zielinski, Gabriel Abadal, Josep Montserrat, Phillippe Godignon
Abstract:The fabrication of freestanding SiC microstructures on Silicon-On-Insulator (SOI) and semi-insulating Silicon substrates is reported. SiC...
617
Authors: Florentina Niebelschütz, Klemens Brueckner, Volker Cimalla, Matthias A. Hein, Jörg Pezoldt
Abstract:The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the...
621
Authors: Anne Henry, Erik Janzén, Enrico Mastropaolo, Rebecca Cheung
Abstract:Cantilever resonators have been fabricated from two types of materials, single crystal and polycrystalline 3C-SiC films. The films have been...
625
Authors: Ruggero Anzalone, Christopher Locke, Andrea Severino, Davide Rodilosso, Cristina Tringali, Gaetano Foti, Stephen E. Saddow, Francesco La Via, Giuseppe D'Arrigo
Abstract:The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on bulk material or on the SiC surface. The...
629
Authors: Christopher Locke, G. Kravchenko, P. Waters, J. D. Reddy, K. Du, A.A. Volinsky, Christopher L. Frewin, Stephen E. Saddow
Abstract:Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of...
633
Authors: Siegmund Greulich-Weber, B. Friedel
Abstract:We report on constructive methods providing a large range of high purity porous SiC products. All methods are based on modified sol-gel...
637
Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The Ti/4H-SiC Schottky barrier diodes with a field limiting ring (FLR) structure are fabricated. Two types of SBDs are prepared; one (SBD-A)...
643
Authors: Denis Perrone, Marco Naretto, Sergio Ferrero, Luciano Scaltrito, C. Fabrizio Pirri
Abstract:We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain Schottky barrier diodes (SBDs) capable to operate at...
647
Showing 151 to 160 of 247 Paper Titles