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Authors: C. Koliakoudakis, J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou, Konstantinos Zekentes
Abstract:The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and...
651
Authors: Chiharu Ota, Johji Nishio, Kazuto Takao, Tetsuo Hatakeyama, Takashi Shinohe, Kazu Kojima, Shin Ichi Nishizawa, Hiromichi Ohashi
Abstract:Previous simulation works and experiments on the loss of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) show that the loss is...
655
Authors: Jochen Hilsenbeck, Michael Treu, Roland Rupp, Dethard Peters, Rudolf Elpelt
Abstract:SiC Diodes in the 300 to 1200V range have steadily increased their market penetration in the last 7 years. Especially the 600V SiC diodes are...
659
Authors: In Ho Kang, Wook Bahng, Sung Jae Joo, Sang Cheol Kim, Nam Kyun Kim
Abstract:The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were...
663
Authors: Gary M. Dolny, Richard L. Woodin, T. Witt, J. Shovlin
Abstract:The impact of barrier tunneling on SiC-JBS performance is studied both experimentally and theoretically. We show that although the pinch-off...
667
Authors: Christophe Raynaud, Duy Minh Nguyen, Pierre Brosselard, Amador Pérez-Tomás, Dominique Planson, José Millan
Abstract:Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal admittance spectroscopy, and by Capacitance-Voltage...
671
Authors: Shuichi Ono, S. Katakami, Manabu Arai
Abstract:The avalanche breakdown characteristics of a graded p+-n junction formed with aluminum ion-implantation for 4H-SiC were investigated. The...
675
Authors: Masataka Satoh, Shohei Nagata, Tohru Nakamura, Hiroshi Doi, Masami Shibagaki
Abstract:Electrical properties of p+n 4H-SiC(0001) diode formed by Al ion implantation to n-type epitaxial layer have been investigated as a function...
679
Authors: Ryouji Kosugi, T. Sakata, Y. Sakuma, K. Suzuki, Tsutomu Yatsuo, H. Matsuhata, Hirotaka Yamaguchi, Ichiro Nagai, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:We have fabricated the four pn-type junction TEGs (Test Element Groups) having different structure. Those TEGs are close to the...
683
Authors: Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Michele Sanmartin
Abstract:Phosphorous implanted n+/p diodes have been included in the masks for manufacturing n-MOSFET devices and processed in the same way of...
687
Showing 161 to 170 of 247 Paper Titles