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Silicon Carbide and Related Materials 2008

Materials Science Forum Volumes 615 - 617

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• p117 Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC   [ 895 K ]
  Authors: Massimo Camarda, Antonino La Magna, Andrea Severino, Francesco La Via
• p121 Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth   [ 866 K ]
  Authors: Hrishikesh Das, Galyna Melnychuk, Yaroslav Koshka
• p125 Inverted Pyramid Defects in 4H-SiC Epilayers   [ 1021 K ]
  Authors: Amitesh Shrivastava, Peter G. Muzykov, Tangali S. Sudarshan
• p129 PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer   [ 478 K ]
  Authors: Ryo Hattori, R. Shimizu, I. Chiba, K. Hamano, Tatsuo Oomori
• p133 On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications   [ 4 M ]
  Authors: Jawad Hassan, Peder Bergman, Anne Henry, Pierre Brosselard, Phillippe Godignon, Erik Janzén
• p137 Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates   [ 700 K ]
  Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Ryo Hattori
• p141 LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application   [ 581 K ]
  Authors: Ryo Hattori, Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro, S. Shimosaki
• p145 High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)   [ 1 M ]
  Authors: Christopher Locke, Ruggero Anzalone, Andrea Severino, Corrado Bongiorno, Grazia Litrico, Francesco La Via, Stephen E. Saddow
• p149 Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si   [ 835 K ]
  Authors: Andrea Severino, Ruggero Anzalone, Corrado Bongiorno, M. Italia, Giuseppe Abbondanza, Massimo Camarda, L.M.S. Perdicaro, Giuseppe Condorelli, Marco Mauceri, Francesco La Via
• p153 A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios   [ 1 M ]
  Authors: Giovanni Attolini, Bernard Enrico Watts, Matteo Bosi, Francesca Rossi, Ferenc Riesz
• p157 Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer   [ 453 K ]
  Authors: Christopher Locke, Christopher L. Frewin, Jing Wang, Stephen E. Saddow
• p161 Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD   [ 247 K ]
  Authors: Hideki Shimizu, Akira Kato
• p165 P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)   [ 3 M ]
  Authors: Günter Wagner, M. Schmidbauer, K. Irmscher, P. Tanner, R. Fornari
• p169 Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon   [ 786 K ]
  Authors: Marcin Zielinski, Marc Portail, Sebastien Roy, S. Kret, Thierry Chassagne, M. Nemoz, Yvon Cordier
• p173 Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls   [ 1 M ]
  Authors: Boris M. Sinelnikov, Vitaly A. Tarala, Ivan S. Mitchenko