Paper Title
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Authors: Kazuaki Seki, Ryo Tanaka, Toru Ujihara, Yoshikazu Takeda
Abstract:We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed...
27
Authors: Didier Chaussende, Jessica Eid, Frédéric Mercier, Roland Madar, Michel Pons
Abstract:The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable...
31
Authors: Ryo Tanaka, Kazuaki Seki, Toru Ujihara, Yoshikazu Takeda
Abstract:Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700°C. The seed...
37
Authors: Frédéric Mercier, Didier Chaussende, Jean Marc Dedulle, Michel Pons, Roland Madar
Abstract:The main problem for the development of 3C-SiC electronics is the lack of an adapted bulk growth process. The seeded sublimation method is...
41
Authors: Jessica Eid, Irina G. Galben-Sandulache, Georgios Zoulis, Teddy Robert, Didier Chaussende, Sandrine Juillaguet, Antoine Tiberj, Jean Camassel
Abstract:We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed...
45
Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel
Abstract:We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role...
49
Authors: Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa
Abstract:The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h by chlorine addition. The epitaxial layers grown with this process...
55
Authors: Brenda L. VanMil, Robert E. Stahlbush, Rachael L. Myers-Ward, Yoosuf N. Picard, S.A. Kitt, J.M. McCrate, S.L. Katz, D. Kurt Gaskill, Charles R. Eddy
Abstract:Conversion of basal plane dislocations (BPD) to threading edge dislocations (TED) in 8° off-cut 4H-SiC within an n+ buffer layer would...
61
Authors: Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano
Abstract:The transfer and generation of extended defects in 4H-SiC epitaxial growth at a high growth rate are examined. An epilayer with virtually no...
67
Authors: Massimo Camarda, Antonino La Magna, Francesco La Via
Abstract:Using joined super-lattice Kinetic Monte Carlo simulations, continuous modelling and recent experimental data on the homoepitaxial growth of...
73
Showing 11 to 20 of 247 Paper Titles