Silicon Carbide and Related Materials 2008
| Paper Title | Page |
|---|---|
|
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method Authors: Kazuaki Seki, Ryo Tanaka, Toru Ujihara, Yoshikazu Takeda |
27 |
|
Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase Authors: Didier Chaussende, Jessica Eid, Frédéric Mercier, Roland Madar, Michel Pons |
31 |
|
High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers Authors: Ryo Tanaka, Kazuaki Seki, Toru Ujihara, Yoshikazu Takeda |
37 |
|
Top Seeded Solution Growth of 3C-SiC Single Crystals Authors: Frédéric Mercier, Didier Chaussende, Jean Marc Dedulle, Michel Pons, Roland Madar |
41 |
|
Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT Authors: Jessica Eid, Irina G. Galben-Sandulache, Georgios Zoulis, Teddy Robert, Didier Chaussende, Sandrine Juillaguet, Antoine Tiberj, Jean Camassel |
45 |
|
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel |
49 |
|
Thick Epitaxial Layers Growth by Chlorine Addition Authors: Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa |
55 |
|
Authors: Brenda L. VanMil, Robert E. Stahlbush, Rachael L. Myers-Ward, Yoosuf N. Picard, S.A. Kitt, J.M. McCrate, S.L. Katz, D. Kurt Gaskill, Charles R. Eddy |
61 |
|
Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer Authors: Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano |
67 |
|
Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC Authors: Massimo Camarda, Antonino La Magna, Francesco La Via |
73 |
