Paper Title
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Authors: Harsh Naik, K. Tang, T. Paul Chow
Abstract:The effects of using a graphite capping layer during implant activation anneal on the performance of 4H-SiC MOSFETs has been evaluated. Two...
773
Authors: Hitoshi Moriya, Shiro Hino, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
Abstract:We have examined the effect of oxidant in metalorganic chemical vapor deposition (MOCVD) of Al2O3 gate insulator on MOSFET electrical...
777
Authors: Takeshi Ohshima, Shinobu Onoda, Toshiro Kamada, Kazutoshi Hotta, Kenji Kawata, Osamu Eryu
Abstract:Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) were fabricated on p-type epitaxial 4H-SiC substrates with different surface...
781
Authors: Harsh Naik, K. Tang, T. Marron, T. Paul Chow, Jody Fronheiser
Abstract:The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of...
785
Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto
Abstract:P-channel MOSFETs have been fabricated on 4H-SiC (0001) face as well as on 4H-SiC (03-38) and (11-20) faces. The gate oxides were formed by...
789
Authors: Eiichi Okuno, Takeshi Endo, Toshio Sakakibara, Shoichi Onda, Makoto Itoh, Tsuyoshi Uda
Abstract:Ab initio calculations were carried out to study the origin of the trap at the SiO2/SiC (MOS: Metal-Oxide-Semiconductor) interface with the...
793
Authors: R. Ramakrishna Rao, Kevin Matocha, Vinayak Tilak
Abstract:The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various...
797
Authors: Vinayak Tilak, Kevin Matocha, Greg Dunne
Abstract:Silicon Carbide (SiC) based metal oxide semiconductor field effect transistors (MOSFETs) were fabricated and characterized using gated hall...
801
Authors: Siddharth Potbhare, Neil Goldsman, Akin Akturk, Aivars J. Lelis, Ronald Green
Abstract:We build upon our previous work on 4H SiC lateral MOSFETs to present physics based numerical modeling and characterization of a 4H-SiC...
805
Authors: Aivars J. Lelis, Daniel B. Habersat, Ronald Green, Neil Goldsman
Abstract:Although recent fast I-V measurements and subthreshold analysis reveal that the threshold-voltage instability due to low-field bias stressing...
809
Showing 191 to 200 of 247 Paper Titles